Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 42.625
BD 0.852 Each (In a Tube of 50) (Exc. Vat)
BD 46.887
BD 0.937 Each (In a Tube of 50) (inc. VAT)
50
BD 42.625
BD 0.852 Each (In a Tube of 50) (Exc. Vat)
BD 46.887
BD 0.937 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.852 | BD 42.625 |
| 100 - 200 | BD 0.676 | BD 33.825 |
| 250+ | BD 0.622 | BD 31.075 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details


