Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
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BD 1.010
Each (In a Pack of 5) (Exc. Vat)
BD 1.111
Each (In a Pack of 5) (Including VAT)
5
BD 1.010
Each (In a Pack of 5) (Exc. Vat)
BD 1.111
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.010 | BD 5.050 |
25 - 45 | BD 0.945 | BD 4.725 |
50 - 120 | BD 0.895 | BD 4.475 |
125 - 245 | BD 0.845 | BD 4.225 |
250+ | BD 0.810 | BD 4.050 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China