Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 46.750
BD 0.935 Each (In a Tube of 50) (Exc. Vat)
BD 51.425
BD 1.029 Each (In a Tube of 50) (inc. VAT)
50
BD 46.750
BD 0.935 Each (In a Tube of 50) (Exc. Vat)
BD 51.425
BD 1.029 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.935 | BD 46.750 |
| 100 - 450 | BD 0.776 | BD 38.775 |
| 500 - 950 | BD 0.764 | BD 38.225 |
| 1000 - 4950 | BD 0.759 | BD 37.950 |
| 5000+ | BD 0.748 | BD 37.400 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details


