Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
16.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
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BD 1.190
Each (In a Pack of 2) (Exc. Vat)
BD 1.309
Each (In a Pack of 2) (Including VAT)
2
BD 1.190
Each (In a Pack of 2) (Exc. Vat)
BD 1.309
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.190 | BD 2.380 |
10 - 18 | BD 1.120 | BD 2.240 |
20 - 48 | BD 1.060 | BD 2.120 |
50 - 98 | BD 1.000 | BD 2.000 |
100+ | BD 0.955 | BD 1.910 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
16.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China