STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STF33N60DM6

RS Stock No.: 202-5509Brand: STMicroelectronicsManufacturers Part No.: STF33N60DM6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 139.272

BD 2.785 Each (In a Tube of 50) (Exc. Vat)

BD 153.199

BD 3.064 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STF33N60DM6

BD 139.272

BD 2.785 Each (In a Tube of 50) (Exc. Vat)

BD 153.199

BD 3.064 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STF33N60DM6

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50BD 2.785BD 139.272
100 - 200BD 2.616BD 130.798
250 - 450BD 2.232BD 111.588
500 - 950BD 2.102BD 105.090
1000+BD 2.034BD 101.700

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more