STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 693.000
BD 0.693 Each (On a Reel of 1000) (Exc. Vat)
BD 762.300
BD 0.762 Each (On a Reel of 1000) (inc. VAT)
1000
BD 693.000
BD 0.693 Each (On a Reel of 1000) (Exc. Vat)
BD 762.300
BD 0.762 Each (On a Reel of 1000) (inc. VAT)
1000
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products