STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
BD 4.306
BD 0.861 Each (In a Pack of 5) (Exc. Vat)
BD 4.737
BD 0.947 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.306
BD 0.861 Each (In a Pack of 5) (Exc. Vat)
BD 4.737
BD 0.947 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.861 | BD 4.306 |
| 25 - 45 | BD 0.815 | BD 4.075 |
| 50 - 120 | BD 0.740 | BD 3.699 |
| 125 - 245 | BD 0.665 | BD 3.324 |
| 250+ | BD 0.630 | BD 3.150 |
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products