STMicroelectronics, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
JEDEC JESD97
Series
Powermesh
Length
10.4mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
BD 21.097
BD 0.422 Each (In a Tube of 50) (Exc. Vat)
BD 23.207
BD 0.464 Each (In a Tube of 50) (inc. VAT)
50
BD 21.097
BD 0.422 Each (In a Tube of 50) (Exc. Vat)
BD 23.207
BD 0.464 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
JEDEC JESD97
Series
Powermesh
Length
10.4mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products