STMicroelectronics STGW20H60DF IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
BD 2.703
BD 1.351 Each (In a Pack of 2) (Exc. Vat)
BD 2.973
BD 1.486 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 2.703
BD 1.351 Each (In a Pack of 2) (Exc. Vat)
BD 2.973
BD 1.486 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 1.351 | BD 2.703 |
| 10 - 18 | BD 1.288 | BD 2.575 |
| 20 - 48 | BD 1.177 | BD 2.355 |
| 50 - 98 | BD 1.079 | BD 2.158 |
| 100+ | BD 1.044 | BD 2.088 |
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products