Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
168W
Package Type
TO
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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Stock information temporarily unavailable.
BD 32.773
BD 1.092 Each (In a Tube of 30) (Exc. Vat)
BD 36.050
BD 1.201 Each (In a Tube of 30) (inc. VAT)
30
BD 32.773
BD 1.092 Each (In a Tube of 30) (Exc. Vat)
BD 36.050
BD 1.201 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
168W
Package Type
TO
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
