STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

RS Stock No.: 860-7523Brand: STMicroelectronicsManufacturers Part No.: STH150N10F7-2
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 3.792

BD 1.896 Each (In a Pack of 2) (Exc. Vat)

BD 4.171

BD 2.086 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 3.792
4BD 7.583
6BD 11.375
8BD 15.167
10BD 18.034
12BD 21.640
14BD 25.247
16BD 28.854
18BD 32.460
20BD 32.484
22BD 35.732
24BD 38.980
26BD 42.229
28BD 45.477
30BD 48.725

BD 3.792

BD 1.896 Each (In a Pack of 2) (Exc. Vat)

BD 4.171

BD 2.086 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 3.792
4BD 7.583
6BD 11.375
8BD 15.167
10BD 18.034
12BD 21.640
14BD 25.247
16BD 28.854
18BD 32.460
20BD 32.484
22BD 35.732
24BD 38.980
26BD 42.229
28BD 45.477
30BD 48.725

QuantityUnit pricePer Pack
2 - 8BD 1.896BD 3.792
10 - 18BD 1.803BD 3.607
20 - 48BD 1.624BD 3.248
50 - 98BD 1.462BD 2.925
100+BD 1.393BD 2.786

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more