STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

RS Stock No.: 234-8895Brand: STMicroelectronicsManufacturers Part No.: STH200N10WF7-2
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

BD 2,624.120

BD 2.624 Each (On a Reel of 1000) (Exc. Vat)

BD 2,886.532

BD 2.886 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

1000

Available in multiples of 1000
1000BD 2,624.120
2000BD 5,248.240
3000BD 7,872.360
4000BD 10,496.480
5000BD 13,120.600
6000BD 15,744.720
7000BD 18,368.840
8000BD 20,992.960
9000BD 23,617.080
10000BD 26,241.200
11000BD 28,865.320
12000BD 31,489.440
13000BD 34,113.560
14000BD 36,737.680
15000BD 39,361.800

BD 2,624.120

BD 2.624 Each (On a Reel of 1000) (Exc. Vat)

BD 2,886.532

BD 2.886 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000BD 2,624.120
2000BD 5,248.240
3000BD 7,872.360
4000BD 10,496.480
5000BD 13,120.600
6000BD 15,744.720
7000BD 18,368.840
8000BD 20,992.960
9000BD 23,617.080
10000BD 26,241.200
11000BD 28,865.320
12000BD 31,489.440
13000BD 34,113.560
14000BD 36,737.680
15000BD 39,361.800

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more