Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.8mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 3.876
BD 1.938 Each (In a Pack of 2) (Exc. Vat)
BD 4.264
BD 2.132 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.876
BD 1.938 Each (In a Pack of 2) (Exc. Vat)
BD 4.264
BD 2.132 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.8mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


