Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Product details
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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BD 2.240
Each (In a Pack of 2) (Exc. Vat)
BD 2.464
Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 2.240
Each (In a Pack of 2) (Exc. Vat)
BD 2.464
Each (In a Pack of 2) (inc. VAT)
Standard
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 2.240 | BD 4.480 |
10 - 18 | BD 2.105 | BD 4.210 |
20 - 48 | BD 1.995 | BD 3.990 |
50 - 98 | BD 1.910 | BD 3.820 |
100+ | BD 1.845 | BD 3.690 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Product details