Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 5 x 6 HV
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
5mm
Length
6mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.95mm
Country of Origin
China
BD 5.720
BD 1.144 Each (In a Pack of 5) (Exc. Vat)
BD 6.292
BD 1.258 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 5.720
BD 1.144 Each (In a Pack of 5) (Exc. Vat)
BD 6.292
BD 1.258 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.144 | BD 5.720 |
25 - 45 | BD 1.072 | BD 5.362 |
50 - 120 | BD 1.018 | BD 5.088 |
125 - 245 | BD 0.968 | BD 4.840 |
250+ | BD 0.935 | BD 4.675 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 5 x 6 HV
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
5mm
Length
6mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.95mm
Country of Origin
China