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STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6

RS Stock No.: 192-4825Brand: STMicroelectronicsManufacturers Part No.: STL10N60M6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5mm

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.95mm

Country of Origin

China

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Stock information temporarily unavailable.

BD 5.720

BD 1.144 Each (In a Pack of 5) (Exc. Vat)

BD 6.292

BD 1.258 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
Select packaging type

BD 5.720

BD 1.144 Each (In a Pack of 5) (Exc. Vat)

BD 6.292

BD 1.258 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 20BD 1.144BD 5.720
25 - 45BD 1.072BD 5.362
50 - 120BD 1.018BD 5.088
125 - 245BD 0.968BD 4.840
250+BD 0.935BD 4.675

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5mm

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.95mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more