Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Country of Origin
China
BD 14.768
BD 2.954 Each (In a Pack of 5) (Exc. Vat)
BD 16.245
BD 3.249 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 14.768
BD 2.954 Each (In a Pack of 5) (Exc. Vat)
BD 16.245
BD 3.249 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 2.954 | BD 14.768 |
| 25 - 45 | BD 2.778 | BD 13.888 |
| 50 - 120 | BD 2.629 | BD 13.145 |
| 125 - 245 | BD 2.497 | BD 12.485 |
| 250+ | BD 2.420 | BD 12.100 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Country of Origin
China


