Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 5.775
BD 0.578 Each (In a Pack of 10) (Exc. Vat)
BD 6.353
BD 0.636 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.775
BD 0.578 Each (In a Pack of 10) (Exc. Vat)
BD 6.353
BD 0.636 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 20 | BD 0.578 | BD 5.775 |
| 30 - 90 | BD 0.561 | BD 5.610 |
| 100 - 490 | BD 0.440 | BD 4.400 |
| 500 - 990 | BD 0.358 | BD 3.575 |
| 1000+ | BD 0.352 | BD 3.520 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


