STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NK60Z

RS Stock No.: 485-7412Brand: STMicroelectronicsManufacturers Part No.: STP10NK60Z
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 8.662

BD 1.732 Each (In a Pack of 5) (Exc. Vat)

BD 9.528

BD 1.905 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NK60Z
Select packaging type

BD 8.662

BD 1.732 Each (In a Pack of 5) (Exc. Vat)

BD 9.528

BD 1.905 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NK60Z
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 5BD 1.732BD 8.662
10 - 95BD 1.458BD 7.288
100 - 495BD 1.138BD 5.692
500 - 995BD 0.968BD 4.840
1000+BD 0.825BD 4.125

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more