Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Length
10.4mm
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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BD 1.165
Each (In a Pack of 5) (Exc. Vat)
BD 1.281
Each (In a Pack of 5) (Including VAT)
5
BD 1.165
Each (In a Pack of 5) (Exc. Vat)
BD 1.281
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | BD 1.165 | BD 5.825 |
10 - 95 | BD 0.990 | BD 4.950 |
100 - 495 | BD 0.770 | BD 3.850 |
500 - 995 | BD 0.655 | BD 3.275 |
1000+ | BD 0.545 | BD 2.725 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Length
10.4mm
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details