STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-220FP STP10NK80ZFP

RS Stock No.: 168-6692Brand: STMicroelectronicsManufacturers Part No.: STP10NK80ZFP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 48.950

BD 0.979 Each (In a Tube of 50) (Exc. Vat)

BD 53.845

BD 1.077 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-220FP STP10NK80ZFP

BD 48.950

BD 0.979 Each (In a Tube of 50) (Exc. Vat)

BD 53.845

BD 1.077 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-220FP STP10NK80ZFP

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50BD 0.979BD 48.950
100 - 450BD 0.781BD 39.050
500 - 950BD 0.704BD 35.200
1000 - 4950BD 0.605BD 30.250
5000+BD 0.588BD 29.425

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more