Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 48.950
BD 0.979 Each (In a Tube of 50) (Exc. Vat)
BD 53.845
BD 1.077 Each (In a Tube of 50) (inc. VAT)
50
BD 48.950
BD 0.979 Each (In a Tube of 50) (Exc. Vat)
BD 53.845
BD 1.077 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.979 | BD 48.950 |
| 100 - 450 | BD 0.781 | BD 39.050 |
| 500 - 950 | BD 0.704 | BD 35.200 |
| 1000 - 4950 | BD 0.605 | BD 30.250 |
| 5000+ | BD 0.588 | BD 29.425 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details


