Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 48.950
BD 0.979 Each (In a Tube of 50) (Exc. Vat)
BD 53.845
BD 1.077 Each (In a Tube of 50) (inc. VAT)
50
BD 48.950
BD 0.979 Each (In a Tube of 50) (Exc. Vat)
BD 53.845
BD 1.077 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.979 | BD 48.950 |
| 100 - 450 | BD 0.781 | BD 39.050 |
| 500 - 950 | BD 0.704 | BD 35.200 |
| 1000 - 4950 | BD 0.605 | BD 30.250 |
| 5000+ | BD 0.588 | BD 29.425 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details


