Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Country of Origin
Morocco
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 3.685
BD 0.737 Each (In a Pack of 5) (Exc. Vat)
BD 4.053
BD 0.811 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.685
BD 0.737 Each (In a Pack of 5) (Exc. Vat)
BD 4.053
BD 0.811 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 0.737 | BD 3.685 |
| 10 - 20 | BD 0.654 | BD 3.272 |
| 25 - 95 | BD 0.627 | BD 3.135 |
| 100 - 495 | BD 0.473 | BD 2.365 |
| 500+ | BD 0.412 | BD 2.062 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Country of Origin
Morocco
Product details



