Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 4.895
BD 0.979 Each (In a Pack of 5) (Exc. Vat)
BD 5.385
BD 1.077 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.895
BD 0.979 Each (In a Pack of 5) (Exc. Vat)
BD 5.385
BD 1.077 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.979 | BD 4.895 |
| 25 - 45 | BD 0.930 | BD 4.648 |
| 50 - 120 | BD 0.842 | BD 4.208 |
| 125 - 245 | BD 0.770 | BD 3.850 |
| 250+ | BD 0.742 | BD 3.712 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details


