Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 3.670
BD 3.670 Each (Exc. Vat)
BD 4.037
BD 4.037 Each (inc. VAT)
Standard
1
BD 3.670
BD 3.670 Each (Exc. Vat)
BD 4.037
BD 4.037 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 1 | BD 3.670 |
| 2+ | BD 3.485 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details


