STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin TO-220 STP240N10F7

RS Stock No.: 860-7567Brand: STMicroelectronicsManufacturers Part No.: STP240N10F7
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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

DeepGate, STripFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 3.966

BD 1.983 Each (In a Pack of 2) (Exc. Vat)

BD 4.363

BD 2.181 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin TO-220 STP240N10F7
Select packaging type

BD 3.966

BD 1.983 Each (In a Pack of 2) (Exc. Vat)

BD 4.363

BD 2.181 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin TO-220 STP240N10F7

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Pack
2 - 8BD 1.983BD 3.966
10 - 18BD 1.915BD 3.831
20 - 48BD 1.870BD 3.740
50 - 98BD 1.819BD 3.639
100+BD 1.774BD 3.548

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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

DeepGate, STripFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more