STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6

RS Stock No.: 760-9673Brand: STMicroelectronicsManufacturers Part No.: STP260N6F6
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

DeepGate, STripFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 1.836

BD 1.836 Each (Exc. Vat)

BD 2.020

BD 2.020 Each (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 1.836
2BD 3.672
3BD 5.509
4BD 7.345
5BD 9.181
6BD 11.018
7BD 12.854
8BD 14.690
9BD 16.526
10BD 18.362
11BD 20.199
12BD 22.035
13BD 23.871
14BD 25.708
15BD 27.544

BD 1.836

BD 1.836 Each (Exc. Vat)

BD 2.020

BD 2.020 Each (inc. VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 1.836
2BD 3.672
3BD 5.509
4BD 7.345
5BD 9.181
6BD 11.018
7BD 12.854
8BD 14.690
9BD 16.526
10BD 18.362
11BD 20.199
12BD 22.035
13BD 23.871
14BD 25.708
15BD 27.544

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

DeepGate, STripFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more