Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
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BD 1.590
Each (In a Pack of 2) (Exc. Vat)
BD 1.749
Each (In a Pack of 2) (Including VAT)
2
BD 1.590
Each (In a Pack of 2) (Exc. Vat)
BD 1.749
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.590 | BD 3.180 |
10 - 18 | BD 1.495 | BD 2.990 |
20 - 48 | BD 1.415 | BD 2.830 |
50 - 98 | BD 1.340 | BD 2.680 |
100+ | BD 1.275 | BD 2.550 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China