STMicroelectronics MDmesh M2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-220 STP28N60M2

RS Stock No.: 829-1459Brand: STMicroelectronicsManufacturers Part No.: STP28N60M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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BD 3.234

BD 1.617 Each (In a Pack of 2) (Exc. Vat)

BD 3.557

BD 1.779 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-220 STP28N60M2
Select packaging type

BD 3.234

BD 1.617 Each (In a Pack of 2) (Exc. Vat)

BD 3.557

BD 1.779 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-220 STP28N60M2

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
2 - 8BD 1.617BD 3.234
10 - 18BD 1.534BD 3.069
20 - 48BD 1.386BD 2.772
50 - 98BD 1.254BD 2.508
100+BD 1.210BD 2.420

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more