Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
13 nC @ 5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.15mm
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 21.725
BD 0.434 Each (In a Tube of 50) (Exc. Vat)
BD 23.897
BD 0.477 Each (In a Tube of 50) (inc. VAT)
50
BD 21.725
BD 0.434 Each (In a Tube of 50) (Exc. Vat)
BD 23.897
BD 0.477 Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
13 nC @ 5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.15mm
Product details