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STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L

RS Stock No.: 920-8795Brand: STMicroelectronicsManufacturers Part No.: STP55NF06L
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

27 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 280.875

BD 5.618 Each (In a Tube of 50) (Exc. Vat)

BD 308.963

BD 6.180 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L

BD 280.875

BD 5.618 Each (In a Tube of 50) (Exc. Vat)

BD 308.963

BD 6.180 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50BD 5.618BD 280.875
100 - 450BD 5.518BD 275.888
500 - 950BD 5.465BD 273.262
1000 - 4950BD 5.413BD 270.638
5000+BD 5.402BD 270.112

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

27 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more