Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
115 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
9.15mm
Minimum Operating Temperature
-65 °C
PRICED TO CLEAR
Yes
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 1.606
BD 0.803 Each (In a Pack of 2) (Exc. Vat)
BD 1.767
BD 0.883 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 1.606
BD 0.803 Each (In a Pack of 2) (Exc. Vat)
BD 1.767
BD 0.883 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 0.803 | BD 1.606 |
| 10 - 18 | BD 0.776 | BD 1.551 |
| 20 - 48 | BD 0.748 | BD 1.496 |
| 50 - 98 | BD 0.720 | BD 1.441 |
| 100+ | BD 0.704 | BD 1.408 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
115 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
9.15mm
Minimum Operating Temperature
-65 °C
PRICED TO CLEAR
Yes
Product details


