Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 2.772
BD 2.772 Each (Exc. Vat)
BD 3.049
BD 3.049 Each (inc. VAT)
Standard
1
BD 2.772
BD 2.772 Each (Exc. Vat)
BD 3.049
BD 3.049 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 2.772 |
| 10 - 99 | BD 2.348 |
| 100 - 499 | BD 1.908 |
| 500 - 999 | BD 1.881 |
| 1000+ | BD 1.870 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-65 °C
Product details


