Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
880 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
113 nC @ 10 V
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 2.871
BD 2.871 Each (Exc. Vat)
BD 3.158
BD 3.158 Each (inc. VAT)
Standard
1
BD 2.871
BD 2.871 Each (Exc. Vat)
BD 3.158
BD 3.158 Each (inc. VAT)
Standard
1
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Please check again later.
quantity | Unit price |
---|---|
1 - 9 | BD 2.871 |
10 - 99 | BD 2.475 |
100 - 499 | BD 2.035 |
500 - 999 | BD 1.832 |
1000+ | BD 1.590 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
880 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
113 nC @ 10 V
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details