Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 50.160
BD 1.672 Each (In a Tube of 30) (Exc. Vat)
BD 55.176
BD 1.839 Each (In a Tube of 30) (inc. VAT)
30
BD 50.160
BD 1.672 Each (In a Tube of 30) (Exc. Vat)
BD 55.176
BD 1.839 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 60 | BD 1.672 | BD 50.160 |
| 90 - 480 | BD 1.342 | BD 40.260 |
| 510 - 960 | BD 1.204 | BD 36.135 |
| 990+ | BD 1.040 | BD 31.185 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Product details


