Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
90 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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BD 0.330
Each (In a Tube of 30) (Exc. Vat)
BD 0.363
Each (In a Tube of 30) (Including VAT)
30
BD 0.330
Each (In a Tube of 30) (Exc. Vat)
BD 0.363
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | BD 0.330 | BD 9.900 |
90 - 480 | BD 0.245 | BD 7.350 |
510+ | BD 0.215 | BD 6.450 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
90 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.