Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.1 x 4.1 x 4.7mm
Product details
General Purpose NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
BD 14.438
BD 0.058 Each (In a Pack of 250) (Exc. Vat)
BD 15.882
BD 0.064 Each (In a Pack of 250) (inc. VAT)
Standard
250
BD 14.438
BD 0.058 Each (In a Pack of 250) (Exc. Vat)
BD 15.882
BD 0.064 Each (In a Pack of 250) (inc. VAT)
Standard
250
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
250 - 250 | BD 0.058 | BD 14.438 |
500 - 1000 | BD 0.052 | BD 13.125 |
1250 - 2250 | BD 0.047 | BD 11.812 |
2500 - 3750 | BD 0.047 | BD 11.812 |
4000+ | BD 0.032 | BD 7.875 |
Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.1 x 4.1 x 4.7mm
Product details