Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3 x 1.4 x 1.2mm
Maximum Operating Temperature
+150 °C
Country of Origin
Taiwan, Province Of China
Product details
General Purpose NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
BD 49.500
BD 0.016 Each (On a Reel of 3000) (Exc. Vat)
BD 54.450
BD 0.018 Each (On a Reel of 3000) (inc. VAT)
3000
BD 49.500
BD 0.016 Each (On a Reel of 3000) (Exc. Vat)
BD 54.450
BD 0.018 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3 x 1.4 x 1.2mm
Maximum Operating Temperature
+150 °C
Country of Origin
Taiwan, Province Of China
Product details


