Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.9e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Number of Elements per Chip
1
Transistor Material
Si
BD 7.095
BD 0.710 Each (In a Pack of 10) (Exc. Vat)
BD 7.805
BD 0.781 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 7.095
BD 0.710 Each (In a Pack of 10) (Exc. Vat)
BD 7.805
BD 0.781 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.710 | BD 7.095 |
| 50 - 90 | BD 0.698 | BD 6.985 |
| 100 - 240 | BD 0.627 | BD 6.270 |
| 250+ | BD 0.616 | BD 6.160 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.9e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Number of Elements per Chip
1
Transistor Material
Si


