N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
10
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products