Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
128000000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.65V
Number of Elements per Chip
1
Transistor Material
Si
BD 115.500
BD 0.038 Each (On a Reel of 3000) (Exc. Vat)
BD 127.050
BD 0.042 Each (On a Reel of 3000) (inc. VAT)
3000
BD 115.500
BD 0.038 Each (On a Reel of 3000) (Exc. Vat)
BD 127.050
BD 0.042 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
128000000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.65V
Number of Elements per Chip
1
Transistor Material
Si