Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.28e+008 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.65V
Number of Elements per Chip
1
Transistor Material
Si
BD 5.500
BD 0.110 Each (In a Pack of 50) (Exc. Vat)
BD 6.050
BD 0.121 Each (In a Pack of 50) (inc. VAT)
Standard
50
BD 5.500
BD 0.110 Each (In a Pack of 50) (Exc. Vat)
BD 6.050
BD 0.121 Each (In a Pack of 50) (inc. VAT)
Standard
50
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 200 | BD 0.110 | BD 5.500 |
| 250 - 450 | BD 0.104 | BD 5.225 |
| 500 - 1200 | BD 0.094 | BD 4.675 |
| 1250 - 2450 | BD 0.088 | BD 4.400 |
| 2500+ | BD 0.082 | BD 4.125 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.28e+008 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.65V
Number of Elements per Chip
1
Transistor Material
Si


