Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si
BD 5.225
BD 0.522 Each (In a Pack of 10) (Exc. Vat)
BD 5.747
BD 0.574 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.225
BD 0.522 Each (In a Pack of 10) (Exc. Vat)
BD 5.747
BD 0.574 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.522 | BD 5.225 |
| 50 - 90 | BD 0.512 | BD 5.115 |
| 100+ | BD 0.390 | BD 3.905 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si


