Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si
BD 5.060
BD 0.506 Each (In a Pack of 10) (Exc. Vat)
BD 5.566
BD 0.557 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.060
BD 0.506 Each (In a Pack of 10) (Exc. Vat)
BD 5.566
BD 0.557 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.506 | BD 5.060 |
| 50 - 90 | BD 0.495 | BD 4.950 |
| 100+ | BD 0.380 | BD 3.795 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si


