Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 8.250
BD 0.330 Each (In a Pack of 25) (Exc. Vat)
BD 9.075
BD 0.363 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 8.250
BD 0.330 Each (In a Pack of 25) (Exc. Vat)
BD 9.075
BD 0.363 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 25 | BD 0.330 | BD 8.250 |
| 50 - 75 | BD 0.324 | BD 8.112 |
| 100 - 225 | BD 0.242 | BD 6.050 |
| 250 - 975 | BD 0.236 | BD 5.912 |
| 1000+ | BD 0.182 | BD 4.538 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Number of Elements per Chip
1
Transistor Material
Si


