Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.450
Each (In a Pack of 5) (Exc. Vat)
BD 0.495
Each (In a Pack of 5) (Including VAT)
5
BD 0.450
Each (In a Pack of 5) (Exc. Vat)
BD 0.495
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.450 | BD 2.250 |
25 - 95 | BD 0.395 | BD 1.975 |
100 - 245 | BD 0.345 | BD 1.725 |
250 - 495 | BD 0.325 | BD 1.625 |
500+ | BD 0.310 | BD 1.550 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details