Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

RS Stock No.: 827-4909Brand: Texas InstrumentsManufacturers Part No.: CSD18563Q5A
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

VSONP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

BD 3.382

BD 0.676 Each (In a Pack of 5) (Exc. Vat)

BD 3.720

BD 0.744 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Select packaging type

BD 3.382

BD 0.676 Each (In a Pack of 5) (Exc. Vat)

BD 3.720

BD 0.744 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Pack
5 - 20BD 0.676BD 3.382
25 - 95BD 0.600BD 2.998
100 - 245BD 0.528BD 2.640
250 - 495BD 0.500BD 2.502
500+BD 0.478BD 2.392

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

VSONP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more