N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT

RS Stock No.: 133-0154Brand: Texas InstrumentsManufacturers Part No.: CSD19502Q5BT
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Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

1.05mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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BD 1.175

Each (In a Pack of 2) (Exc. Vat)

BD 1.293

Each (In a Pack of 2) (Including VAT)

N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 2.350
4BD 4.700
6BD 7.050
8BD 9.400
10BD 11.200
12BD 13.440
14BD 15.680
16BD 17.920
18BD 20.160
20BD 20.100
22BD 22.110
24BD 24.120
26BD 26.130
28BD 28.140
30BD 30.150

BD 1.175

Each (In a Pack of 2) (Exc. Vat)

BD 1.293

Each (In a Pack of 2) (Including VAT)

N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 2.350
4BD 4.700
6BD 7.050
8BD 9.400
10BD 11.200
12BD 13.440
14BD 15.680
16BD 17.920
18BD 20.160
20BD 20.100
22BD 22.110
24BD 24.120
26BD 26.130
28BD 28.140
30BD 30.150

Buy in bulk

quantityUnit pricePer Pack
2 - 8BD 1.175BD 2.350
10 - 18BD 1.120BD 2.240
20 - 48BD 1.005BD 2.010
50 - 98BD 0.905BD 1.810
100+BD 0.875BD 1.750

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Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

1.05mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more