Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6400000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Number of Elements per Chip
1
Transistor Material
Si
BD 1,113.750
BD 0.446 Each (On a Reel of 2500) (Exc. Vat)
BD 1,225.125
BD 0.491 Each (On a Reel of 2500) (inc. VAT)
2500
BD 1,113.750
BD 0.446 Each (On a Reel of 2500) (Exc. Vat)
BD 1,225.125
BD 0.491 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6400000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Number of Elements per Chip
1
Transistor Material
Si