Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.490
Each (In a Tube of 50) (Exc. Vat)
BD 0.539
Each (In a Tube of 50) (Including VAT)
50
BD 0.490
Each (In a Tube of 50) (Exc. Vat)
BD 0.539
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.490 | BD 24.500 |
100 - 200 | BD 0.440 | BD 22.000 |
250 - 450 | BD 0.415 | BD 20.750 |
500 - 700 | BD 0.395 | BD 19.750 |
750+ | BD 0.375 | BD 18.750 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details