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Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS

RS Stock No.: 145-1334Brand: Texas InstrumentsManufacturers Part No.: CSD19534KCS
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

BD 390.500

BD 7.810 Each (In a Tube of 50) (Exc. Vat)

BD 429.550

BD 8.591 Each (In a Tube of 50) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS

BD 390.500

BD 7.810 Each (In a Tube of 50) (Exc. Vat)

BD 429.550

BD 8.591 Each (In a Tube of 50) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50BD 7.810BD 390.500
100 - 200BD 7.777BD 388.850
250 - 450BD 7.760BD 388.025
500 - 700BD 7.755BD 387.750
750+BD 7.750BD 387.475

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more