Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
BD 390.500
BD 7.810 Each (In a Tube of 50) (Exc. Vat)
BD 429.550
BD 8.591 Each (In a Tube of 50) (inc. VAT)
50
BD 390.500
BD 7.810 Each (In a Tube of 50) (Exc. Vat)
BD 429.550
BD 8.591 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 7.810 | BD 390.500 |
100 - 200 | BD 7.777 | BD 388.850 |
250 - 450 | BD 7.760 | BD 388.025 |
500 - 700 | BD 7.755 | BD 387.750 |
750+ | BD 7.750 | BD 387.475 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details