Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
BD 214.500
BD 0.072 Each (On a Reel of 3000) (Exc. Vat)
BD 235.950
BD 0.079 Each (On a Reel of 3000) (inc. VAT)
3000
BD 214.500
BD 0.072 Each (On a Reel of 3000) (Exc. Vat)
BD 235.950
BD 0.079 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si